d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 1 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information 40v p - channel enhancement mode mosfet p ower di 3333 - 8 product summary b v dss r ds(on) max i d max t a = + 25 c - 40v 13 m ? @ v gs = - 10 v - 10.3 a 18 m ? @ v gs = - 4.5 v - 8.8 a description and applications this mosfet is designed to meet the st ringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? reverse polarity protection ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C e nsures on - state losse s are minimized ? small form factor thermally efficient package enables higher density end products ? occupies 33% of the board area occupied by so - 8 , enabli ng smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free . green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture se nsitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering informa tion (note 5 ) part number case packaging dm p40 13 l fg q - 7 p ower di3333 - 8 2 , 0 00 /tape & reel dm p40 13 lfg q - 13 p ower di3333 - 8 3 , 000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs), 2011/65/eu (rohs 2) & 2015/863/eu (rohs 3) com pliant. 2. see http://www.diodes.com/quality/lead_free / for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defin ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. refer to https://www.diodes.com/quality/ . 5. for packaging de tails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information top view bottom view p ower di3333 - 8 p13 = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 8 = 201 8 ) ww = week code (01 to 53) equivalent circuit p13 y yww p ow er di3333 - 8 powerdi is a registered trademark of diodes incorporated. s s s g d d d d pin 1 d s g
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 2 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 4 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 10.3 - 8.3 a t<10s t a = + 25c t a = + 70c i d - 13.7 - 11 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm - 80 a maximum continuous body diode f orward current (note 7 ) i s - 2.6 a avalanche current , l = 0. 1 mh i as - 34 a avalanche energy , l = 0. 1 mh e as 58 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 1 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 1 23 c/w t<10s 6 9 total power dissipation (note 7 ) p d 2. 1 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ja 60 c/w t<10s 34 thermal resistance, jun ction to case (note 7 ) r j c 3 . 3 operating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (no te 8 ) drain - source breakdown voltage bv dss - 4 0 gs = 0v, i d = - 250a j = +25c i dss ds = - 40 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1 ds = v gs , i d = - 250 a ds(on) ? gs = - 10 v, i d = - 10 a gs = - 4 .5 v, i d = - 8 a diode forward voltage v sd gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss ds = - 2 0 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gat e charge ( v gs = - 4.5 v ) q g ds = - 20 v, i d = - 10 a total gate charge ( v gs = - 10 v ) q g gs gd d(on) d d = - 20 v , v g en = - 10 v , r g = 3 ? d = - 10 a turn - on rise time t r d(off) f rr ? ? f = - 10 a, di/dt = 1 0 0a/s rr ? ? notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 inch square copper plate . 8 . short duration pulse test used to m inimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 3 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information v , gate - source voltage (v) gs fi gure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 12 14 16 18 20 i = - 10a d i = - 8a d r ds(on) , drain - source on - resistance ( ? v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.0v gs v = -10v gs v = -4.5v gs v = -3.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.006 0.008 0.01 0.012 0.014 0.016 0 5 10 15 20 25 30 v = -4.5v gs v = -10v gs i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -10v gs 15 20 25 30 t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -8a gs d v = -10v i = -10a gs d
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 4 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information v , drain - source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.1 1 10 100 r lim ited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j( max ) a v = - 10v single pulse gs dut on 1 * mrp board i d , drain current (a) - i d =250 ? a ( c ) t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 -50 -25 0 25 50 75 100 125 150 v = -10v i = a gs d -10 v = 5v i = a gs d -4. -8 t , ambient temperature ( C ) figure 8 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250 A d v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 5 t = 150 c a ? 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a ? t = 25 c a ? t = -55 c a ? t = 85 c a ? q , total gate charge (nc) figure 11 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v = -20v i = -10a ds d c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 10 typical junction capacitance ds 100 1000 10000 0 5 10 15 20 25 30 35 40 c oss c rss f = 1mhz c iss
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 5 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information 119 c /w t1, pulse duration times (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 119 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 1 1e-04 0.001 0.01 0.1 1 10 100 1000 d = 0.9
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 6 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 powerdi3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3
25 3.35 3.30 e2 1.56 1.66 1.61 e3 0.79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? z ? ? ? ? all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 y4 0.540 x3 y3 x y c y1 y2 x1 x2 1 8 y4 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) 1 8 e3 e4
d m p4013lfg q document number: d s 3 8779 rev. 2 - 2 7 of 7 www.diodes.com march 2018 ? diodes incorporated d mp40 13lfg q advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the rig ht to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this doc ument or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever i n respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representat ives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by o ne or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated in to multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a c ritical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify di odes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 8 , diodes incorporated www.diodes.com
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